Double storage speed on smartphones
Samsung announced that is focusing on the mass production the industry’s highest capacity and high-speed-compatible embedded Universal Flash Storage (eUFS 3.0).
With the new eUFS 3.0-specifications, Samsung’s new memory provides twice the speed of its previous 2.1 version and can now work with today’s smartphones and convert them into futuristic devices.
“The start of mass production of the eUFS 3.0 series gives us a big head start in the next-generation mobile market, where we are introducing a memory read speed that was previously only available in very thin laptops,” said Cheol Choi, Executive Vice President of Memory Sales & Marketing at Samsung Electronics. “As we expand our eUFS 3.0 offerings, including the 1 Terabyte (TB) version later this year, we expect to be a major contributor to accelerating momentum in the premium mobile market.”
Samsung’s release
Samsung created its first UFS interface in January 2015 and became 1.4 times faster than systems of the era (called MMCs at the time). They called it eMMC. In just four years, the new eUFS version has been able to rival the performance of today’s ultra-thin notebooks.
Samsung is releasing this new 512GB version of its memory built from 8 layers of 5th generation 512GB V-NAND with a built-in high-performance controller. At a speed of 2,100 MB/s, this memory doubles the speed of Samsung’s latest eUFS 2.1 memory, announced in January. This new storage solution is four times faster than your standard hard-drive and twenty times faster than the fastest microSD card. The sequential write speed has been improved from 210 MB/s to 410 MB/s.
The random read and write speed of the new memory, providing a 36% increase over the current industry specification, helps deliver on performance goals. It can support up to 63,000 and 68,000 input/output operations per second (IOPS). With enhanced read and write speeds, their capabilities can load complex apps at a much faster speed and achieve improved responsiveness overall.
Samsung recently released 512GB eUFS 3.0 and 128GB versions, and plans to release 1TB and 256GB in the second half of the year. As a high-capacity memory card, this piece of engineering has the potential to leave a mark in the field of mobile devices.
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Author: PC-GR
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